, u na, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 TIP55A, tip56a, tip57a, tip58a n-p-n silicon powebjransistors device schematic min v(br)ceo of 25 v to 400 v 50 w at 100 c case temperature 10 a peak collector current designed for automotive ignition and switching regulator applications characterized for operation in ignition and switching regulator applications high-voltage, high forward and reverse energy to-218aa package emitter collector base the collector is in electrical contact with the mounting tab absolute maximum ratings at 25c case temperature (unless otherwise noted) collector-base voltage collector-emitter voltage (ib = 0] emitter-base voltage continuous collector current peek collector current (see note 11 continuous base current safe operating area continuous device dissipation at lor below) 10oc case temperature (see note 2) continuous device dissipation at lor below) 26 c free-air temperature (see note 3> operating collector junction and storage temperature range lead temperature 3.2mm (0.1 25 inch) from case for 10 seconds tipg5a tip56a 350v 400v 250v 300v 8v bv tipbva 450v 350v 8v 7.ba tip68a 600v 400v 8v , ida ' 4a see figure 8 50 w 3w -668cto1boc 300c notes: 1. this value applies for tw < 10ms, duty cycle < 1o%. 2. derate linearly to 1 eoc case temperature at the rate of 1 vwc or refer to dissipation derating curve, figure 9. 3. derate linearly to 1 boc free-air temperature at the rate of 24 mw/c or refer to dissipation derating curve, figure 10. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tips5a. tip56a, tip57a, tip58a n-p-n silicon power transistors electrical characteristics at 25c case temperature parameter vibriceo icer iebo "fe vbe(sat) vceisatl test conditions 1c s 2o ma, ig ? 0, see note 4 vce - 350v, rbe?27fi vce = 400v, flbe = 27s vce = 450v, rbe = 27c vce = boo v, rbe = 278 veb = av, ic = o vce c zv, ig = i a, see holes 4 and 6 vce = 2v, ic = ba, son notes 4 and 6 ia?ia, ic = ba, see notes 4 and b lfl= 1 a, 'c ? 5a, see notes 4 end 5 ib ? 4a, lc = 10a, see notes 4 end 5 tipssa min tvp max 250 100 100 10 100 6 1.5 1.2 2.6 tip56a min typ max 300 1oo 100 10 100 6 1.5 1.2 2.b tip57a min typ max 360 100 100 10 100 6 1.6 1.2 2.s tips8a min typ max 400 100 1oo 10 100 e 1.6 1.2 2.8 unit v fa ?a v v notes: '4. these parameters must bo measured using pulse techniques, tw = soopi. duty cycle* 2 %. b. these parameters are measured with voltage-sensing contacts saparata from the current-carrying contacts and located within 3,2 mm (0.12b inch) from the device body. thermal characteristics parameter "we rftja rjchs ("a note 6) cec min typ max 1 41.7 0.6 1.4 unit ?c/w j/c note b: this parameter must ba measured using a (0.003 inchl mica insulator with dow-corning 11 compound on both sides of the insulator, 6-32 mounting screws with bushing, and a mounting torque of 8 inch-pounds. reslsttve-load switching characteristics at 25c case temperature parameter ?d tr ?s if test conditions' |c = 5a. ib1?1a. ib2=-1a. vbeioff) = -4v, rl = 4oo, see figure 1 min typ max 0.04 0.13 1,5 0.2 unit cs 1 voltage and current values shown are nominal; exact values vaty slightly with transistor parameters. functional tests at 25c free-air temperature test powar (vce * 'cl reverse pulse energy 1 .? ^ .1 forward pulse energy f . i operation as commutatkig, switch test conditions vce = 50v. "cm - ba, ttes, ?o.bs. icm = 10a, f = 60 hi, ?load = sa, ttast - o.bs. ic = 2a, t,ast = 0.16a l = 2mh, 1 = lohl, see figure 2 l = bmh, vc|anlp = vceombx rating, tfest = 0.5s, see figure 3 vcg = 0.8 vceo mflx rating, f = 20 khz, see figure 4 level 100w 25 mj 250 mj
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